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| IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII I I III I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I III I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIII I I III I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII * * * * . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications. (1) Indicates JEDEC Registered Data. ** JEDEC Registered Value is 10 A, Motorola Guaranteed Value is 15 A. 3-104 (c) Motorola, Inc. 1995 High Voltage NPN Silicon Power Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA THERMAL CHARACTERISTICS MAXIMUM RATINGS REV 1 Maximum Lead Temperature for Soldering Purposes: 1/8" from Case for 5 Seconds Thermal Resistance, Junction to Case Operating and Storage Junction (1) Temperature Range Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C* Emitter Current -- Continuous -- Peak Base Current -- Continuous (1) -- Peak Collector Current -- Continuous** -- Peak Emitter-Base Voltage Collector-Base Voltage (1) Collector-Emitter Voltage (1) Collector-Emitter Voltage (1) High Voltage Breakdown Rating Low Saturation Voltages Fast Switching Capability High ES/b Energy Handling Capability Characteristic Rating 100 20 POWER DERATING FACTOR (%) 40 60 80 0 0 VCEO(sus) VCER(sus) Symbol Symbol TJ, Tstg 40 RJC VCB VEB IC ICM IB IBM IE IEM PD TL Figure 1. Power Derating THERMAL DERATING TC, CASE TEMPERATURE (C) 80 - 65 to + 200 Value Max 275 175 100 1.0 450 375 350 1.0 6.0 25 50 10 20 15 30 SECOND BREAKDOWN DERATING 120 Motorola Bipolar Power Transistor Device Data Watts W/_C _C/W 160 Unit Unit Adc Adc Adc Vdc Vdc Vdc Vdc _C _C 200 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS 2N6251 Order this document by 2N6251/D CASE 1-07 TO-204AA (TO-3) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I III I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII II I I I IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII * Indicates JEDEC Registered Data. (1) Measured on a curve tracer (60 Hz full-wave rectified sine wave). *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) SECOND BREAKDOWN Motorola Bipolar Power Transistor Device Data Fall Time Storage Time Rise Time Resistive Load (Table 1) Current-Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 10 Adc, IB = 1.25 Adc) (IC = 10 Adc, IB = 1.67 Adc) Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.67 Adc) DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) Second Breakdown Energy with base reverse biased (Table 1) (IC = 10 A, VBE(off) = 4.0 Vdc, L = 50 H) Second Breakdown Collector Current with base forward biased t = 1.0s (non-repetitive) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 225 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) Collector Cutoff Current (VCE = Rated VCER, VBE(off) = 1.5 Vdc) (VCE = Rated VCER, VBE(off) = 1.5 Vdc, TC = 125_C) Collector-Emitter Sustaining Voltage (Table 1) (IC = 200 mA) Collector-Emitter Sustaining Voltage (Table 1) (IC = 200 mA, IB = 0) Characteristic (VCC = 200 Vdc, IC = 10 A, Duty Cycle 2.0%, tp = 100 s) (IB1 = IB2 = 1.67 Adc) v (VCE = 30 V) (VCE = 100 V) VCEO(sus) VCER(sus) VCE(sat) VBE(sat) Symbol ICEO IEBO ICEV ES/b hFE IS/b fT ts tr tf Min 375 350 2.5 6.0 2.5 5.8 0.3 -- -- -- -- -- -- -- -- -- Max 1.0 3.5 2.0 2.5 1.5 1.0 5.0 5.0 10 50 -- -- -- -- -- -- 2N6251 3-105 mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc Vdc mJ s s s -- 2N6251 Table 1. Test Conditions for Dynamic Performance VCEO(sus) 39 1 VCER(sus) ES/b RESISTIVE SWITCHING 50 F 50 1 50 51 51 0.02 F IC = 10 A PW 100 s tr 5 ns tf 50 ns DUTY CYCLE 2% VCC = 200 V RL = 20 RESISTIVE TEST CIRCUIT + 15 V TIP41B 4.7 1 2 39 1 +6.0 V 51 0 IB1 = 2.0 A +10 V 2 0 INPUT CONDITIONS +6.0 V 0 2 4V 2 Lcoil = 42 mH Rcoil = 0.7 , fo = 60 Hz VCC = 0 to 50 V INDUCTIVE TEST CIRCUIT TUT Lcoil = 14 mH Rcoil = 0.05 VCC = 0 to 50 V fo = 60 Hz OUTPUT WAVEFORMS IC CIRCUIT VALUES Lcoil = 50 H, VCC = 11.5 V Rcoil = 0.2 TEST CIRCUITS 1 1N4937 VCL Rcoil Lcoil IC(pk) t t1 VCE tf t1 Adjusted to Obtain IC t1 (ICpk [ LcoilCC ) V 1 3 2 t 25 + 200 V 20 DC CURRENT PROBE TUT 2 RS 0.1 VCC NOTE: SET IC(pk) TO OBTAIN IC = 200 mA AT VCEO(sus) EQUAL TO RATED VALUE. NOTE: ADJUST VClamp VOLTAGE FOR VCEO(sus) RATED VALUE. - 6.0 V r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 ZJC(t) = r(t) RJC RJC = 1.0C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 P(pk) 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.02 0.01 0.02 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k t1 Figure 2. Thermal Response 30 20 IC, COLLECTOR CURRENT (AMP) 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 500 s 100 s 1.0 10 ms ms dc TC = 25C TC = 100C 50 ms 20 s 0.05 0.03 TC = 25C UNLESS NOTED BONDING WIRE LIMIT THERMAL LIMIT, SINGLE PULSE SECOND BREAKDOWN LIMIT 50 70 100 5.0 7.0 10 20 30 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 Figure 3. Active-Region Safe Operating Area 3-106 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on TC = 25_C. TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltage shown on Figure 3 may be found at any case temperature by using the appropriate curve on Figure 1. TJ(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. w Motorola Bipolar Power Transistor Device Data 2N6251 DC CHARACTERISTICS VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 70 hFE, DC CURRENT GAIN 50 25C TJ = 150C 2.0 TJ = 25C 1.6 30 20 1.2 IC = 2.0 A 0.8 6.0 A 10 A 15A - 55C 10 7.0 5.0 0.2 0.3 VCE = 3.0 V VCE = 10 V 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 0.4 0 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IB, BASE CURRENT (mA) 5.0 7.0 Figure 4. DC Current Gain Figure 5. Collector Saturation Region 1.2 V, VOLTAGE (VOLTS) 1.0 TJ = 25C V, TEMPERATURE COEFFICIENTS (mV/C) 1.4 2.5 2.0 1.5 1.0 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.2 0.3 0.5 0.7 1.0 2.0 VB for VBE *VC for VCE(sat) *APPLIES FOR IC/IB hFE @ VCE 3 + 3.0 V VBE(sat) @ IC/IB = 5.0 0.8 0.6 0.4 0.2 0 0.2 0.3 VCE(sat) @ IC/IB = 5 0.5 1.0 2.0 3.0 5.0 7.0 10 20 VBE(on) @ VCE = 3.0 V 25C to 150C - 55C to 25C 25C to 150C - 55C to 25C 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 6. "On" Voltagae Figure 7. Temperature Coefficients RESISTIVE SWITCHING PERFORMANCE 3.0 k 2.0 k tr 1.0 k 700 500 300 200 100 70 50 30 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 td @ VBE(off) = 5.0 V 10 k 7.0 k 5.0 k 3.0 k t, TIME (ns) 2.0 k 1.0 k 700 500 300 200 100 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VCC = 200 V IC/IB = 5.0 IB1 = IB2 TJ = 25C VCC = 200 V IC/IB = 5.0 TJ = 25C ts t, TIME (ns) tr IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 8. Turn-on Time Figure 9. Turn-off Time Motorola Bipolar Power Transistor Device Data 3-107 2N6251 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z 3-108 Motorola Bipolar Power Transistor Device Data 2N6251 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 Motorola Bipolar Power Transistor Device Data *2N6251/D* 3-109 2N6251/D |
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